5SNA 1600N170300 ABB
Виробник: ABB
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Max. off-state voltage: 1.7kV
Semiconductor structure: common emitter; common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: SPT+
Topology: IGBT half-bridge x2
Case: HIPAK
кількість в упаковці: 1 шт
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common gate,common emitter
Max. off-state voltage: 1.7kV
Semiconductor structure: common emitter; common gate; transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 1.6kA
Pulsed collector current: 3.2kA
Electrical mounting: screw
Mechanical mounting: screw
Type of module: IGBT
Technology: SPT+
Topology: IGBT half-bridge x2
Case: HIPAK
кількість в упаковці: 1 шт
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Технічний опис 5SNA 1600N170300 ABB
Category: IGBT modules, Description: Module: IGBT; transistor/transistor,common gate,common emitter, Max. off-state voltage: 1.7kV, Semiconductor structure: common emitter; common gate; transistor/transistor, Gate-emitter voltage: ±20V, Collector current: 1.6kA, Pulsed collector current: 3.2kA, Electrical mounting: screw, Mechanical mounting: screw, Type of module: IGBT, Technology: SPT+, Topology: IGBT half-bridge x2, Case: HIPAK, кількість в упаковці: 1 шт.
Інші пропозиції 5SNA 1600N170300
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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5SNA 1600N170300 | Виробник : ABB |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common gate,common emitter Max. off-state voltage: 1.7kV Semiconductor structure: common emitter; common gate; transistor/transistor Gate-emitter voltage: ±20V Collector current: 1.6kA Pulsed collector current: 3.2kA Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: SPT+ Topology: IGBT half-bridge x2 Case: HIPAK |
товар відсутній |