Результат пошуку "61WV3216DBLL10TLI" : 9

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IS61WV3216DBLL-10TLI IS61WV3216DBLL-10TLI ISSI 61-64WV3216DBxx.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV3216DBLL-10TLI IS61WV3216DBLL-10TLI ISSI 61-64WV3216DBxx.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
IS61WV3216DBLL-10TLI IS61WV3216DBLL-10TLI ISSI 61-64wv3216dbxx.pdf SRAM Chip Async Single 2.5V/3.3V 512K-bit 32K x 16 10ns 44-Pin TSOP-II
товар відсутній
IS61WV3216DBLL-10TLI IS61WV3216DBLL-10TLI ISSI, Integrated Silicon Solution Inc IS6%281%2C4%29WV3216DxLL_DxLS.pdf Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
товар відсутній
IS61WV3216DBLL-10TLI-TR IS61WV3216DBLL-10TLI-TR ISSI, Integrated Silicon Solution Inc IS6%281%2C4%29WV3216DxLL_DxLS.pdf Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
товар відсутній
IS61WV3216DBLL-10TLI-TR IS61WV3216DBLL-10TLI-TR ISSI 61-64wv3216daxx-dbxx.pdf SRAM Chip Async Single 2.5V/3.3V 512K-bit 32K x 16 10ns 44-Pin TSOP-II T/R
товар відсутній
IS61WV3216DBLL-10TLI-TR ISSI 61-64WV3216DBxx.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній
IS61WV3216DBLL-10TLI 61-64WV3216DBxx.pdf
IS61WV3216DBLL-10TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
товар відсутній
IS61WV3216DBLL-10TLI 61-64WV3216DBxx.pdf
IS61WV3216DBLL-10TLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1 шт
товар відсутній
IS61WV3216DBLL-10TLI 61-64wv3216dbxx.pdf
IS61WV3216DBLL-10TLI
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 512K-bit 32K x 16 10ns 44-Pin TSOP-II
товар відсутній
IS61WV3216DBLL-10TLI IS6%281%2C4%29WV3216DxLL_DxLS.pdf
IS61WV3216DBLL-10TLI
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
товар відсутній
IS61WV3216DBLL-10TLI-TR IS6%281%2C4%29WV3216DxLL_DxLS.pdf
IS61WV3216DBLL-10TLI-TR
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 512KBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.4V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 32K x 16
DigiKey Programmable: Not Verified
товар відсутній
IS61WV3216DBLL-10TLI-TR 61-64wv3216daxx-dbxx.pdf
IS61WV3216DBLL-10TLI-TR
Виробник: ISSI
SRAM Chip Async Single 2.5V/3.3V 512K-bit 32K x 16 10ns 44-Pin TSOP-II T/R
товар відсутній
IS61WV3216DBLL-10TLI-TR 61-64WV3216DBxx.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 512kbSRAM; 32kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 512kb SRAM
Memory organisation: 32kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
кількість в упаковці: 1000 шт
товар відсутній