Технічний опис 6HP04MH-TL-W ON Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -0.37A, Pulsed drain current: -1.48A, Power dissipation: 0.6W, Case: SOT323, Gate-source voltage: ±20V, On-state resistance: 4.2mΩ, Mounting: SMD, Gate charge: 0.84nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate.
Інші пропозиції 6HP04MH-TL-W
| Фото | Назва | Виробник | Інформація |
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6HP04MH-TL-W | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.37A Pulsed drain current: -1.48A Power dissipation: 0.6W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 0.84nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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6HP04MH-TL-W | Виробник : onsemi | Description: MOSFET P-CH 60V 370MA SC70FL |
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6HP04MH-TL-W | Виробник : onsemi | Description: MOSFET P-CH 60V 370MA SC70FL |
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6HP04MH-TL-W | Виробник : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -0.37A; Idm: -1.48A; 0.6W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -0.37A Pulsed drain current: -1.48A Power dissipation: 0.6W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 0.84nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |