Результат пошуку "70101E" : 45
Вид перегляду :
Мінімальне замовлення: 5
Мінімальне замовлення: 5
Мінімальне замовлення: 3
Мінімальне замовлення: 3000
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Мінімальне замовлення: 2
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
70101E.00500 | BELDEN |
Category: Serial Bus Cables Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca Operating temperature: -15...70°C Insulation colour: violet Kind of core: Cu Shield structure: Al-PET foil; shielded twofold; tinned copper braid Number of cores: 2 No. of pairs: 1 Cable application: indoor; PROFIBUS Cable external diameter: 7.8mm Core diameter: 22AWG Core structure: solid CPR standard: Eca Package contents: 500m Package contents - ft: 1640ft Cable structure: 1x2x22AWG Type of wire: data transmission Wire insulation material: PVC |
на замовлення 207 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
70101E.00500 | BELDEN |
Category: Serial Bus Cables Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca Operating temperature: -15...70°C Insulation colour: violet Kind of core: Cu Shield structure: Al-PET foil; shielded twofold; tinned copper braid Number of cores: 2 No. of pairs: 1 Cable application: indoor; PROFIBUS Cable external diameter: 7.8mm Core diameter: 22AWG Core structure: solid CPR standard: Eca Package contents: 500m Package contents - ft: 1640ft Cable structure: 1x2x22AWG Type of wire: data transmission Wire insulation material: PVC кількість в упаковці: 5 шт |
на замовлення 207 шт: термін постачання 7-14 дні (днів) |
|
|||||||||||||||
BTS70101EPAXUMA1 | Infineon Technologies | Power Switch ICs - Power Distribution PROFET |
на замовлення 7322 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
BTS70101EPAXUMA1 | Infineon Technologies | Current Limit Switch High Side |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
PD70101EVB6F | Microchip Technology | Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 1.2A output |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
SUM70101EL-GE3 | Vishay Siliconix | P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263 |
на замовлення 8 шт: термін постачання 2-3 дні (днів) |
|
|||||||||||||||
SUM70101EL-GE3 | Vishay Semiconductors | MOSFET -100V Vds 20V Vgs TO-263 |
на замовлення 6803 шт: термін постачання 329-338 дні (днів) |
|
|||||||||||||||
SUP70101EL-GE3 | Vishay Semiconductors | MOSFET -100V Vds 20V Vgs TO-220AB |
на замовлення 1783 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||
5962-8970101EA | TI | 01+ DIP16 |
на замовлення 143 шт: термін постачання 14-28 дні (днів) |
||||||||||||||||
70101E | BELDEN |
Category: Serial Bus Cables Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca Operating temperature: -15...70°C Insulation colour: violet Kind of core: Cu; tinned Shield structure: Al-PET foil; shielded twofold; tinned copper braid Number of cores: 2 No. of pairs: 1 Cable application: indoor; PROFIBUS Cable external diameter: 7.8mm Core diameter: 22AWG Core structure: solid Information: The UL Label and Mark on full factory packaging only CPR standard: Eca Package contents: 500m Package contents - ft: 1640ft Cable structure: 1x2x22AWG Conform to the norm: UL 20276 Type of wire: data transmission Wire insulation material: PVC |
товар відсутній |
||||||||||||||||
10124677-0101E13LF | Amphenol FCI | DIMM Connectors DDR4 DIMM connector Vertical Surface Mount 288 Position 085mm (0033in) Pitch |
товар відсутній |
||||||||||||||||
5962-8970101EA | Texas Instruments | Flip Flop D-Type Bus Interface Pos-Edge 1-Element 16-Pin CDIP Tube |
товар відсутній |
||||||||||||||||
929647-01-01-EU | 3M Electronic Solutions Division | Headers & Wire Housings 1R AU PIN STRIP HDR |
товар відсутній |
||||||||||||||||
929667-01-01-EU | 3M Electronic Solutions Division | Headers & Wire Housings 02 PS/2R/RA/.235 .110/ALL 10U/ROHS |
товар відсутній |
||||||||||||||||
BTS70101EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14 Technology: PROFET™+2 Case: PG-TSDSO-14 On-state resistance: 19.5mΩ Mounting: SMD Kind of package: reel; tape Output current: 9A Operating temperature: -40...150°C Supply voltage: 4.1...28V DC Kind of integrated circuit: high-side Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel |
товар відсутній |
||||||||||||||||
BTS70101EPAXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14 Technology: PROFET™+2 Case: PG-TSDSO-14 On-state resistance: 19.5mΩ Mounting: SMD Kind of package: reel; tape Output current: 9A Operating temperature: -40...150°C Supply voltage: 4.1...28V DC Kind of integrated circuit: high-side Type of integrated circuit: power switch Number of channels: 1 Kind of output: N-Channel кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
MAL203870101E3 | Vishay | Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 210mA 2500h 85C Automotive Ammo |
товар відсутній |
||||||||||||||||
MAL214270101E3 | Vishay | Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 150mA 2500h 105C Ammo |
товар відсутній |
||||||||||||||||
MAL214270101E3 | Vishay / BC Components | Aluminium Electrolytic Capacitors - Radial Leaded 35V 100uF 20% |
товар відсутній |
||||||||||||||||
PD70101EVB15F-12 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA |
товар відсутній |
||||||||||||||||
PD70101EVB15F-12 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
PD70101EVB15F-12 | Microchip Technology | Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 12V 1.1A output |
товар відсутній |
||||||||||||||||
PD70101EVB15F-5 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA |
товар відсутній |
||||||||||||||||
PD70101EVB15F-5 | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
PD70101EVB15F-5 | Microchip Technology | IEEE802.3 Type 1 PD Based On PD70101 Device Controlling an Isolated Flyback Converter, Having a 5V 2.6Amp Output |
товар відсутній |
||||||||||||||||
PD70101EVB15F-5 | Microchip Technology | Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 2.6A output |
товар відсутній |
||||||||||||||||
PD70101EVB3F | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA |
товар відсутній |
||||||||||||||||
PD70101EVB3F | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
PD70101EVB3F | Microchip Technology | Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 3.3V 1A output |
товар відсутній |
||||||||||||||||
PD70101EVB6F | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA |
товар відсутній |
||||||||||||||||
PD70101EVB6F | MICROCHIP (MICROSEMI) |
Category: ETHERNET interfaces -integrated circuits Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at Operating temperature: 0...70°C Channel output power: 15.4W Type of development kit: evaluation Supply voltage: 37...57V DC Standard: IEEE 802.3af/at Maximum output current: 32mA кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
SUM70101EL-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
SUM70101EL-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 800 шт |
товар відсутній |
||||||||||||||||
SUM70101EL-GE3 | Vishay | Trans MOSFET P-CH 100V 120A 3-Pin(2+Tab) D2PAK |
товар відсутній |
||||||||||||||||
SUP70101EL-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
||||||||||||||||
SUP70101EL-GE3 | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||
SUP70101EL-GE3 | Vishay | Trans MOSFET P-CH 100V 120A 3-Pin(3+Tab) TO-220AB |
товар відсутній |
70101E.00500 |
Виробник: BELDEN
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Type of wire: data transmission
Wire insulation material: PVC
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Type of wire: data transmission
Wire insulation material: PVC
на замовлення 207 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 164.4 грн |
10+ | 95.84 грн |
25+ | 91.05 грн |
70101E.00500 |
Виробник: BELDEN
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Type of wire: data transmission
Wire insulation material: PVC
кількість в упаковці: 5 шт
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Type of wire: data transmission
Wire insulation material: PVC
кількість в упаковці: 5 шт
на замовлення 207 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 197.28 грн |
10+ | 119.43 грн |
25+ | 109.26 грн |
BTS70101EPAXUMA1 |
Виробник: Infineon Technologies
Power Switch ICs - Power Distribution PROFET
Power Switch ICs - Power Distribution PROFET
на замовлення 7322 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.41 грн |
10+ | 111.1 грн |
100+ | 84.78 грн |
250+ | 77.55 грн |
500+ | 68.35 грн |
1000+ | 57.64 грн |
3000+ | 54.55 грн |
BTS70101EPAXUMA1 |
Виробник: Infineon Technologies
Current Limit Switch High Side
Current Limit Switch High Side
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 52.52 грн |
PD70101EVB6F |
Виробник: Microchip Technology
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 1.2A output
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 1.2A output
на замовлення 2 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
1+ | 24917.74 грн |
SUM70101EL-GE3 |
Виробник: Vishay Siliconix
P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263
P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263
на замовлення 8 шт:
термін постачання 2-3 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 384.63 грн |
10+ | 358.99 грн |
100+ | 333.34 грн |
SUM70101EL-GE3 |
Виробник: Vishay Semiconductors
MOSFET -100V Vds 20V Vgs TO-263
MOSFET -100V Vds 20V Vgs TO-263
на замовлення 6803 шт:
термін постачання 329-338 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 290.59 грн |
10+ | 240.33 грн |
100+ | 169.56 грн |
500+ | 155.1 грн |
SUP70101EL-GE3 |
Виробник: Vishay Semiconductors
MOSFET -100V Vds 20V Vgs TO-220AB
MOSFET -100V Vds 20V Vgs TO-220AB
на замовлення 1783 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
2+ | 207.78 грн |
25+ | 162.49 грн |
100+ | 120.92 грн |
500+ | 107.78 грн |
1000+ | 101.86 грн |
2500+ | 93.98 грн |
70101E |
Виробник: BELDEN
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu; tinned
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
Information: The UL Label and Mark on full factory packaging only
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Conform to the norm: UL 20276
Type of wire: data transmission
Wire insulation material: PVC
Category: Serial Bus Cables
Description: Wire; 1x2x22AWG; PROFIBUS; solid; Cu; PVC; violet; 500m; CPR: Eca
Operating temperature: -15...70°C
Insulation colour: violet
Kind of core: Cu; tinned
Shield structure: Al-PET foil; shielded twofold; tinned copper braid
Number of cores: 2
No. of pairs: 1
Cable application: indoor; PROFIBUS
Cable external diameter: 7.8mm
Core diameter: 22AWG
Core structure: solid
Information: The UL Label and Mark on full factory packaging only
CPR standard: Eca
Package contents: 500m
Package contents - ft: 1640ft
Cable structure: 1x2x22AWG
Conform to the norm: UL 20276
Type of wire: data transmission
Wire insulation material: PVC
товар відсутній
10124677-0101E13LF |
Виробник: Amphenol FCI
DIMM Connectors DDR4 DIMM connector Vertical Surface Mount 288 Position 085mm (0033in) Pitch
DIMM Connectors DDR4 DIMM connector Vertical Surface Mount 288 Position 085mm (0033in) Pitch
товар відсутній
5962-8970101EA |
Виробник: Texas Instruments
Flip Flop D-Type Bus Interface Pos-Edge 1-Element 16-Pin CDIP Tube
Flip Flop D-Type Bus Interface Pos-Edge 1-Element 16-Pin CDIP Tube
товар відсутній
929647-01-01-EU |
Виробник: 3M Electronic Solutions Division
Headers & Wire Housings 1R AU PIN STRIP HDR
Headers & Wire Housings 1R AU PIN STRIP HDR
товар відсутній
929667-01-01-EU |
Виробник: 3M Electronic Solutions Division
Headers & Wire Housings 02 PS/2R/RA/.235 .110/ALL 10U/ROHS
Headers & Wire Housings 02 PS/2R/RA/.235 .110/ALL 10U/ROHS
товар відсутній
BTS70101EPAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: 9A
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: 9A
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
товар відсутній
BTS70101EPAXUMA1 |
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: 9A
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
кількість в упаковці: 1 шт
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9A; Ch: 1; N-Channel; SMD; PG-TSDSO-14
Technology: PROFET™+2
Case: PG-TSDSO-14
On-state resistance: 19.5mΩ
Mounting: SMD
Kind of package: reel; tape
Output current: 9A
Operating temperature: -40...150°C
Supply voltage: 4.1...28V DC
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Number of channels: 1
Kind of output: N-Channel
кількість в упаковці: 1 шт
товар відсутній
MAL203870101E3 |
Виробник: Vishay
Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 210mA 2500h 85C Automotive Ammo
Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 210mA 2500h 85C Automotive Ammo
товар відсутній
MAL214270101E3 |
Виробник: Vishay
Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 150mA 2500h 105C Ammo
Cap Aluminum Lytic 100uF 35V 20% (6.3 X 11mm) Radial 2.5mm 150mA 2500h 105C Ammo
товар відсутній
MAL214270101E3 |
Виробник: Vishay / BC Components
Aluminium Electrolytic Capacitors - Radial Leaded 35V 100uF 20%
Aluminium Electrolytic Capacitors - Radial Leaded 35V 100uF 20%
товар відсутній
PD70101EVB15F-12 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
товар відсутній
PD70101EVB15F-12 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
товар відсутній
PD70101EVB15F-12 |
Виробник: Microchip Technology
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 12V 1.1A output
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 12V 1.1A output
товар відсутній
PD70101EVB15F-5 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
товар відсутній
PD70101EVB15F-5 |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
товар відсутній
PD70101EVB15F-5 |
Виробник: Microchip Technology
IEEE802.3 Type 1 PD Based On PD70101 Device Controlling an Isolated Flyback Converter, Having a 5V 2.6Amp Output
IEEE802.3 Type 1 PD Based On PD70101 Device Controlling an Isolated Flyback Converter, Having a 5V 2.6Amp Output
товар відсутній
PD70101EVB15F-5 |
Виробник: Microchip Technology
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 2.6A output
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 5V 2.6A output
товар відсутній
PD70101EVB3F |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
товар відсутній
PD70101EVB3F |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
товар відсутній
PD70101EVB3F |
Виробник: Microchip Technology
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 3.3V 1A output
Ethernet Development Tools IEEE802.3af/bt Type 1 PD EVB PD70101 w/isolated flyback conv. 3.3V 1A output
товар відсутній
PD70101EVB6F |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
товар відсутній
PD70101EVB6F |
Виробник: MICROCHIP (MICROSEMI)
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
Category: ETHERNET interfaces -integrated circuits
Description: Dev.kit: evaluation; 0÷70°C; 37÷57VDC; Standard: IEEE 802.3af/at
Operating temperature: 0...70°C
Channel output power: 15.4W
Type of development kit: evaluation
Supply voltage: 37...57V DC
Standard: IEEE 802.3af/at
Maximum output current: 32mA
кількість в упаковці: 1 шт
товар відсутній
SUM70101EL-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
SUM70101EL-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 0.19µC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 800 шт
товар відсутній
SUP70101EL-GE3 |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
SUP70101EL-GE3 |
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -120A
Pulsed drain current: -240A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній