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8.0SMDJ14A-T7

8.0SMDJ14A-T7 LITTELFUSE


8.0SMDJ_ser.pdf Виробник: LITTELFUSE
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 15.6÷17.2V; 344.9A; unidirectional; ±5%; DO214AB
Tolerance: ±5%
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 344.9A
Peak pulse power dissipation: 8kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 14V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.2mA
Case: DO214AB
кількість в упаковці: 1 шт
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Технічний опис 8.0SMDJ14A-T7 LITTELFUSE

Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 8kW; 15.6÷17.2V; 344.9A; unidirectional; ±5%; DO214AB, Tolerance: ±5%, Type of diode: TVS, Mounting: SMD, Breakdown voltage: 15.6...17.2V, Max. forward impulse current: 344.9A, Peak pulse power dissipation: 8kW, Features of semiconductor devices: glass passivated, Max. off-state voltage: 14V, Kind of package: reel; tape, Semiconductor structure: unidirectional, Leakage current: 0.2mA, Case: DO214AB, кількість в упаковці: 1 шт.

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8.0SMDJ14A-T7 8.0SMDJ14A-T7 Виробник : LITTELFUSE 8.0SMDJ_ser.pdf Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 15.6÷17.2V; 344.9A; unidirectional; ±5%; DO214AB
Tolerance: ±5%
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 344.9A
Peak pulse power dissipation: 8kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 14V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 0.2mA
Case: DO214AB
товар відсутній