94-3250 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 30V 12A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MQ
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V
Power Dissipation (Max): 2.3W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DIRECTFET™ MQ
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V
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Технічний опис 94-3250 Infineon Technologies
Description: MOSFET N-CH 30V 12A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MQ, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 12A, 7V, Power Dissipation (Max): 2.3W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DIRECTFET™ MQ, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2270 pF @ 15 V.