Результат пошуку "A.PT150" : 18
Вид перегляду :
Мінімальне замовлення: 4
Мінімальне замовлення: 3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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APT150GN120J | Microchip Technology |
 Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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APT150GN120J | Microchip Technology |
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
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APT150GN120J | Microchip Technology |
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
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| APT150GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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APT150GN120J | Microchip Technology |
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube |
товар відсутній |
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| APT150GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 99A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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APT150GN120JDQ4 | Microchip Technology |
Trans IGBT Module N-CH 1200V |
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APT150GN120JDQ4 | Microchip Technology |
Trans IGBT Module N-CH 1200V |
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APT150GN60B2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max Type of transistor: IGBT Collector current: 123A Case: T-Max Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Kind of package: tube Gate charge: 970nC |
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| APT150GN60J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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APT150GN60J | Microchip Technology |
Trans IGBT Module N-CH 600V |
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| APT150GN60JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 0.6kV Collector current: 123A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 450A Technology: Field Stop; Trench Mechanical mounting: screw |
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APT150GN60JDQ4 | Microchip Technology |
Trans IGBT Module N-CH 600V |
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APT150GN60JDQ4 | Microchip Technology |
Trans IGBT Module N-CH 600V |
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APT150GN60LDQ4G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264 Type of transistor: IGBT Collector current: 123A Case: TO264 Mounting: THT Gate-emitter voltage: ±30V Pulsed collector current: 450A Turn-on time: 154ns Turn-off time: 575ns Collector-emitter voltage: 600V Power dissipation: 536W Technology: Field Stop Features of semiconductor devices: integrated anti-parallel diode Kind of package: tube Gate charge: 970nC |
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APT150GN60LDQ4G | Microchip Technology |
Trans IGBT Chip N-CH 600V 220A 536W 3-Pin(3+Tab) TO-264 Tube |
товар відсутній |
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| APT150GT120JR | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 90A Case: SOT227B Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 450A Technology: NPT; Thunderblot IGBT® Mechanical mounting: screw |
товар відсутній |
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APT150GT120JR | Microchip Technology |
Trans IGBT Module N-CH 1200V 170A 830000mW |
товар відсутній |
| APT150GN120J |
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Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2849.73 грн |
| APT150GN120J |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
на замовлення 18 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 3068.94 грн |
| APT150GN120J |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
на замовлення 20 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 4475.12 грн |
| 5+ | 4025.69 грн |
| 10+ | 3661.02 грн |
| 20+ | 3367.38 грн |
| APT150GN120J |
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Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
| APT150GN120J |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
Trans IGBT Module N-CH 1200V 215A 625W 4-Pin SOT-227 Tube
товар відсутній
| APT150GN120JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 99A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 99A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
| APT150GN60B2G |
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Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; T-Max
Type of transistor: IGBT
Collector current: 123A
Case: T-Max
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Kind of package: tube
Gate charge: 970nC
товар відсутній
| APT150GN60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
| APT150GN60JDQ4 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 123A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
Collector current: 123A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Technology: Field Stop; Trench
Mechanical mounting: screw
товар відсутній
| APT150GN60LDQ4G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 123A; 536W; TO264
Type of transistor: IGBT
Collector current: 123A
Case: TO264
Mounting: THT
Gate-emitter voltage: ±30V
Pulsed collector current: 450A
Turn-on time: 154ns
Turn-off time: 575ns
Collector-emitter voltage: 600V
Power dissipation: 536W
Technology: Field Stop
Features of semiconductor devices: integrated anti-parallel diode
Kind of package: tube
Gate charge: 970nC
товар відсутній
| APT150GN60LDQ4G |
|
Виробник: Microchip Technology
Trans IGBT Chip N-CH 600V 220A 536W 3-Pin(3+Tab) TO-264 Tube
Trans IGBT Chip N-CH 600V 220A 536W 3-Pin(3+Tab) TO-264 Tube
товар відсутній
| APT150GT120JR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 90A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 90A
Case: SOT227B
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 450A
Technology: NPT; Thunderblot IGBT®
Mechanical mounting: screw
товар відсутній
| APT150GT120JR |
|
Виробник: Microchip Technology
Trans IGBT Module N-CH 1200V 170A 830000mW
Trans IGBT Module N-CH 1200V 170A 830000mW
товар відсутній