A1P50S65M2

A1P50S65M2 STMicroelectronics


a1p50s65m2-1848865.pdf Виробник: STMicroelectronics
IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
на замовлення 26 шт:

термін постачання 21-30 дні (днів)
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1+3868.5 грн
10+ 3558.36 грн
18+ 2963.62 грн
108+ 2796.08 грн
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Технічний опис A1P50S65M2 STMicroelectronics

Description: IGBT MOD 650V 50A 208W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.

Інші пропозиції A1P50S65M2

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A1P50S65M2 Виробник : STMicroelectronics en.DM00441933.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Application: Inverter; motors
Power dissipation: 208W
Gate-emitter voltage: ±20V
Collector current: 50A
Max. off-state voltage: 650V
Type of module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Case: ACEPACK™1
Pulsed collector current: 100A
товар відсутній
A1P50S65M2 A1P50S65M2 Виробник : STMicroelectronics en.DM00441933.pdf Description: IGBT MOD 650V 50A 208W ACEPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
товар відсутній
A1P50S65M2 Виробник : STMicroelectronics en.DM00441933.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge x3; Ic: 50A
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Application: Inverter; motors
Power dissipation: 208W
Gate-emitter voltage: ±20V
Collector current: 50A
Max. off-state voltage: 650V
Type of module: IGBT
Topology: IGBT half-bridge x3; NTC thermistor
Semiconductor structure: transistor/transistor
Case: ACEPACK™1
Pulsed collector current: 100A
товар відсутній