AO8822 ALPHA&OMEGA
Виробник: ALPHA&OMEGATrans MOSFET N-CH 20V 7A 8-Pin TSSOP AO8822 TAO8822
кількість в упаковці: 25 шт
на замовлення 100 шт:
термін постачання 28-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 14.19 грн |
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Технічний опис AO8822 ALPHA&OMEGA
Description: MOSFET 2N-CH 20V 7A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 7A, Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V, Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-TSSOP, Part Status: Not For New Designs.
Інші пропозиції AO8822
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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AO8822 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 7A 8-Pin TSSOP |
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AO8822 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 0.96W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Semiconductor structure: common drain кількість в упаковці: 1 шт |
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AO8822 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7A 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP Part Status: Not For New Designs |
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AO8822 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 20V 7A 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-TSSOP |
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AO8822 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 5.5A; 960mW; TSSOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.5A Power dissipation: 0.96W Case: TSSOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Semiconductor structure: common drain |
товар відсутній |