Технічний опис AS4C128M8D1-6TIN Alliance Memory
Category: DRAM memories - integrated circuits, Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II, Type of integrated circuit: DRAM memory, Kind of memory: DDR1; SDRAM, Memory organisation: 128Mx8bit, Clock frequency: 166MHz, Access time: 700ps, Case: TSOP66 II, Memory capacity: 1024Mb, Mounting: SMD, Operating temperature: -40...85°C, Kind of interface: parallel, Operating voltage: 2.3...2.7V.
Інші пропозиції AS4C128M8D1-6TIN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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AS4C128M8D1-6TIN | Виробник : Alliance Memory, Inc. |
 Description: IC DRAM 1GBIT PARALLEL 66TSOP II |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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| AS4C128M8D1-6TIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 128Mx8bit Clock frequency: 166MHz Access time: 700ps Case: TSOP66 II Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
товар відсутній |
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| AS4C128M8D1-6TIN | Виробник : ALLIANCE MEMORY |
Category: DRAM memories - integrated circuits Description: IC: DRAM memory; 128Mx8bit; 2.3÷2.7V; 166MHz; 700ps; TSOP66 II Type of integrated circuit: DRAM memory Kind of memory: DDR1; SDRAM Memory organisation: 128Mx8bit Clock frequency: 166MHz Access time: 700ps Case: TSOP66 II Memory capacity: 1024Mb Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Operating voltage: 2.3...2.7V |
товар відсутній |