FDS6673BZ-F085

FDS6673BZ-F085 ON Semiconductor / Fairchild


FDS6673BZ_F085-1119686.pdf Виробник: ON Semiconductor / Fairchild
MOSFET -30V P-Channel PowerTrench
на замовлення 3700 шт:

термін постачання 21-30 дні (днів)
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Технічний опис FDS6673BZ-F085 ON Semiconductor / Fairchild

Description: MOSFET P-CH 30V 14.5A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

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FDS6673BZ-F085 FDS6673BZ-F085.pdf
на замовлення 16080 шт:
термін постачання 14-28 дні (днів)
FDS6673BZ-F085 FDS6673BZ-F085 Виробник : ON Semiconductor fds6673bz_f085-d.pdf Trans MOSFET P-CH 30V 14.5A Automotive 8-Pin SOIC T/R
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FDS6673BZ-F085 FDS6673BZ-F085 Виробник : ON Semiconductor fds6673bz_f085-d.pdf Trans MOSFET P-CH 30V 14.5A Automotive AEC-Q101 8-Pin SOIC T/R
товар відсутній
FDS6673BZ-F085 FDS6673BZ-F085 Виробник : onsemi FDS6673BZ-F085.pdf Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній
FDS6673BZ-F085 FDS6673BZ-F085 Виробник : onsemi FDS6673BZ-F085.pdf Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товар відсутній