Технічний опис FGA30N120FTDTU ON Semiconductor
Description: IGBT 1200V 60A 339W TO3P, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 730 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A, Supplier Device Package: TO-3PN, IGBT Type: Trench Field Stop, Gate Charge: 208 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 339 W.
Інші пропозиції FGA30N120FTDTU
| Фото | Назва | Виробник | Інформація |
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FGA30N120FTDTU | Виробник : onsemi |
 Description: IGBT 1200V 60A 339W TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 730 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Gate Charge: 208 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 339 W |
товар відсутній |
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FGA30N120FTDTU | Виробник : onsemi / Fairchild |
IGBT Transistors 1200V 30A FS |
товар відсутній |