Технічний опис FGH25N120FTDS ON Semiconductor
Description: IGBT 1200V 50A 313W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 535 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 26ns/151ns, Switching Energy: 1.42mJ (on), 1.16mJ (off), Test Condition: 600V, 25A, 10Ohm, 15V, Gate Charge: 169 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 75 A, Power - Max: 313 W.
Інші пропозиції FGH25N120FTDS
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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FGH25N120FTDS | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH25N120FTDS | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube |
товар відсутній |
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FGH25N120FTDS | Виробник : onsemi |
Description: IGBT 1200V 50A 313W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 535 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/151ns Switching Energy: 1.42mJ (on), 1.16mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 169 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 313 W |
товар відсутній |