Технічний опис FGH25T120SMD-F155 ON Semiconductor
Description: IGBT TRENCH FS 1200V 50A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 40ns/490ns, Switching Energy: 1.74mJ (on), 560µJ (off), Test Condition: 600V, 25A, 23Ohm, 15V, Gate Charge: 225 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 100 A, Power - Max: 428 W.
Інші пропозиції FGH25T120SMD-F155
| Фото | Назва | Виробник | Інформація |
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FGH25T120SMD-F155 | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 1200V 50A 428W 3-Pin(3+Tab) TO-247 Tube |
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FGH25T120SMD-F155 | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 428000mW 3-Pin(3+Tab) TO-247 Tube |
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FGH25T120SMD-F155 | Виробник : onsemi |
Description: IGBT TRENCH FS 1200V 50A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/490ns Switching Energy: 1.74mJ (on), 560µJ (off) Test Condition: 600V, 25A, 23Ohm, 15V Gate Charge: 225 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 428 W |
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FGH25T120SMD-F155 | Виробник : onsemi / Fairchild |
IGBT Transistors 1200V, 25A Field Stop Trench IGBT |
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FGH25T120SMD-F155 | Виробник : ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 214W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 214W Case: TO247-3 Gate-emitter voltage: ±25V Pulsed collector current: 100A Mounting: THT Gate charge: 225nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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