FGH40T65UPD

FGH40T65UPD ON Semiconductor / Fairchild


FGH40T65UPD-D-1809378.pdf Виробник: ON Semiconductor / Fairchild
IGBT Transistors 650 V 80 A 268 W
на замовлення 4529 шт:

термін постачання 21-30 дні (днів)
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Технічний опис FGH40T65UPD ON Semiconductor / Fairchild

Description: IGBT TRENCH/FS 650V 80A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 43 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: TO-247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 20ns/144ns, Switching Energy: 1.59mJ (on), 580µJ (off), Test Condition: 400V, 40A, 7Ohm, 15V, Gate Charge: 177 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 80 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 268 W.

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FGH40T65UPD FGH40T65UPD Виробник : ON Semiconductor fgh40t65upd-d.pdf Trans IGBT Chip N-CH 650V 80A 268000mW 3-Pin(3+Tab) TO-247 Tube
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FGH40T65UPD FGH40T65UPD Виробник : onsemi fgh40t65upd-d.pdf Description: IGBT TRENCH/FS 650V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
товар відсутній