Технічний опис IRF6725MTRPBF Infineon
Description: MOSFET N-CH 30V 28A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MX, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V, Power Dissipation (Max): 2.8W (Ta), 100W (Tc), Vgs(th) (Max) @ Id: 2.35V @ 100µA, Supplier Device Package: DIRECTFET™ MX, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V.
Інші пропозиції IRF6725MTRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRF6725MTRPBF Код товару: 124996 |
Транзистори > Польові N-канальні |
товар відсутній
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IRF6725MTRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH Si 30V 28A 7-Pin Direct-FET MX T/R |
товар відсутній |
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IRF6725MTRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 30V 28A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товар відсутній |
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| IRF6725MTRPBF | Виробник : International Rectifier |
Description: DIRECTFET POWER MOSFET Packaging: Bulk Package / Case: DirectFET™ Isometric MX Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V Power Dissipation (Max): 2.8W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 100µA Supplier Device Package: DIRECTFET™ MX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
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IRF6725MTRPBF | Виробник : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET DIRECTFET MX |
товар відсутній |