YJD20N06A Yangjie Technology
Виробник: Yangjie TechnologyDescription: TO-252 N 60V 20A Transistors FE
Packaging: Tape & Reel (TR)
Part Status: Active
на замовлення 250000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 13.4 грн |
| 12500+ | 12.22 грн |
| 25000+ | 11.46 грн |
| 50000+ | 10.1 грн |
| 100000+ | 9.07 грн |
| 250000+ | 8.42 грн |
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Технічний опис YJD20N06A Yangjie Technology
Description: N-CH MOSFET 60V 20A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V, Power Dissipation (Max): 34W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V.
Інші пропозиції YJD20N06A за ціною від 7.45 грн до 18.55 грн
| Фото | Назва | Виробник | Інформація |
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YJD20N06A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 5040 шт: термін постачання 21-30 дні (днів) |
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YJD20N06A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 60V; 14A; Idm: 60A Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 60V Drain current: 14A Pulsed drain current: 60A Power dissipation: 22.5W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 5040 шт: термін постачання 7-14 дні (днів) |
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| YJD20N06A | Виробник : Yangjie Electronic Technology |
N-Channel Enhancement Mode Field Effect Transistor |
на замовлення 500000 шт: термін постачання 21-31 дні (днів) |
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YJD20N06A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V |
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YJD20N06A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 60V 20A TO-252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 20A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 30 V |
товар відсутній |