YJD25N15B

YJD25N15B YANGJIE TECHNOLOGY


Виробник: YANGJIE TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис YJD25N15B YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 25A, Pulsed drain current: 90A, Power dissipation: 52W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 75mΩ, Mounting: SMD, Gate charge: 11.6nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.

Інші пропозиції YJD25N15B

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
YJD25N15B YJD25N15B Виробник : YANGJIE TECHNOLOGY Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 25A; Idm: 90A; 52W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 25A
Pulsed drain current: 90A
Power dissipation: 52W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 11.6nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній