YJL02N10A YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W
Type of transistor: N-MOSFET
Technology: TRENCH POWER MV
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Pulsed drain current: 8A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.31Ω
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 10 шт
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Технічний опис YJL02N10A YANGJIE TECHNOLOGY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W, Type of transistor: N-MOSFET, Technology: TRENCH POWER MV, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 1.6A, Pulsed drain current: 8A, Power dissipation: 1.2W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 0.31Ω, Mounting: SMD, Gate charge: 5.3nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 10 шт.
Інші пропозиції YJL02N10A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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YJL02N10A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товар відсутній |
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YJL02N10A | Виробник : Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: N-CH MOSFET 100V 2A SOT-23-3L |
товар відсутній |
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YJL02N10A | Виробник : YANGJIE TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 1.6A; 1.2W Type of transistor: N-MOSFET Technology: TRENCH POWER MV Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.6A Pulsed drain current: 8A Power dissipation: 1.2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 5.3nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |