YJS12N10A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 100V; 7.6A, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 7.6A, Pulsed drain current: 120A, Power dissipation: 3.3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 17mΩ, Mounting: SMD, Gate charge: 80nC, Kind of package: reel; tape, Kind of channel: enhanced, кількість в упаковці: 1 шт.