AFT09MS007NT1 - Transistors - Field N-cannal

AFT09MS007NT1

AFT09MS007NT1

Product id: 107764
Manufacturer:
Transistors - Field N-cannal

AFT09MS007N.pdf
On stock/available

Technical description AFT09MS007NT1

Price AFT09MS007NT1 From 69.14 UAH to 462.26 UAH

AFT09MS007NT1
Manufacturer: NXP Semiconductors
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
AFT09MS007N.pdf
available 1873 pc(s)
lead time 6-21 days
2+ 192.14 UAH
10+ 155.39 UAH
25+ 148.52 UAH
100+ 124.5 UAH
250+ 105.28 UAH
500+ 87.77 UAH
1000+ 69.14 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP USA Inc.
Description: FET RF 30V 870MHZ PLD1.5W
Part Status: Active
Packaging: Tape & Reel (TR)
Gain: 15.2dB
Frequency: 870MHz
Transistor Type: LDMOS
Base Part Number: AFT09
Supplier Device Package: PLD-1.5W
Package / Case: PLD-1.5W
Voltage - Rated: 30V
Power - Output: 7.3W
Current - Test: 100mA
Voltage - Test: 7.5V
Manufacturer: NXP USA Inc.
AFT09MS007N.pdf
available 11000 pc(s)
lead time 7-22 days
1000+ 200.2 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP USA Inc.
Description: FET RF 30V 870MHZ PLD1.5W
Voltage - Test: 7.5V
Gain: 15.2dB
Frequency: 870MHz
Transistor Type: LDMOS
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: NXP USA Inc.
Base Part Number: AFT09
Supplier Device Package: PLD-1.5W
Package / Case: PLD-1.5W
Voltage - Rated: 30V
Power - Output: 7.3W
Current - Test: 100mA
AFT09MS007N.pdf
available 11804 pc(s)
lead time 7-22 days
1+ 207.55 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP Semiconductors
RF MOSFET Transistors LANDMOBILE 7W PLD1.5W
AFT09MS007N-1125793.pdf
available 15 pc(s)
lead time 8-21 days
1+ 216.27 UAH
10+ 191.81 UAH
25+ 158.08 UAH
100+ 136.85 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP
Description: NXP - AFT09MS007NT1 - RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W
Product Range: -
Power Dissipation Pd: 114
Continuous Drain Current Id: -
Operating Frequency Min: 136
Operating Temperature Max: 150
MSL: MSL 3 - 168 hours
Operating Frequency Max: 941
Drain Source Voltage Vds: 30
RF Transistor Case: PLD-1.5W
No. of Pins: 2
2353638.pdf
available 430 pc(s)
lead time 10-18 days
10+ 236.6 UAH
100+ 228.4 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP
Description: NXP - AFT09MS007NT1 - RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W
Product Range: -
Power Dissipation Pd: 114
Continuous Drain Current Id: -
Operating Temperature Max: 150
Operating Frequency Min: 136
MSL: MSL 3 - 168 hours
Operating Frequency Max: 941
Drain Source Voltage Vds: 30
RF Transistor Case: PLD-1.5W
No. of Pins: 2
2353638.pdf
available 430 pc(s)
lead time 10-18 days
3+ 244.79 UAH
10+ 236.6 UAH
100+ 228.4 UAH
AFT09MS007NT1
AFT09MS007NT1
Manufacturer: NXP USA Inc.
Description: FET RF 30V 870MHZ PLD1.5W
Power - Output: 7.3W
Current - Test: 100mA
Supplier Device Package: PLD-1.5W
Voltage - Test: 7.5V
Gain: 15.2dB
Frequency: 870MHz
Transistor Type: LDMOS
Part Status: Active
Packaging: Digi-Reel® (Surcharge for the reel of $7)
Voltage - Rated: 30V
Package / Case: PLD-1.5W
AFT09MS007N.pdf
available 4751 pc(s)
lead time 7-22 days
1+ 462.26 UAH
10+ 179.85 UAH
25+ 139.14 UAH
100+ 114.02 UAH
250+ 106.71 UAH
500+ 95.33 UAH
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer:
AFT09MS007NT1 PLD1.5W/Wideband RF Power LDMOS Transistor, 136-941 MHz, 7 W, 7.5 V
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart
AFT09MS007NT1
Manufacturer: NXP Semiconductors
Trans RF MOSFET N-CH 30V 3-Pin PLD-1.5W T/R
AFT09MS007N.pdf
out of stock, you can ask lead time by adding item to cart