AON6998 ALPHA & OMEGA SEMICONDUCTOR
Виробник: ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 31/54A
Power dissipation: 8/13W
Case: DFN5x6
Gate-source voltage: ±12V; ±20V
On-state resistance: 5.2/2.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhanced
Semiconductor structure: asymmetric
кількість в упаковці: 1 шт
на замовлення 2622 шт:
термін постачання 7-14 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 51.14 грн |
| 10+ | 44.25 грн |
| 24+ | 40.97 грн |
| 64+ | 38.51 грн |
| 500+ | 38.35 грн |
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Технічний опис AON6998 ALPHA & OMEGA SEMICONDUCTOR
Description: MOSFET 2N-CH 30V 19A/26A DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 19A, 26A, Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFN (5x6), Part Status: Not For New Designs.
Інші пропозиції AON6998 за ціною від 31.96 грн до 51.48 грн
| Фото | Назва | Виробник | Інформація |
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AON6998 | Виробник : ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 31/54A; 8/13W; DFN5x6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 31/54A Power dissipation: 8/13W Case: DFN5x6 Gate-source voltage: ±12V; ±20V On-state resistance: 5.2/2.6mΩ Mounting: SMD Gate charge: 13nC Kind of channel: enhanced Semiconductor structure: asymmetric |
на замовлення 2622 шт: термін постачання 21-30 дні (днів) |
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AON6998 Код товару: 165965 |
Мікросхеми > Транзисторні збірки |
товар відсутній
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| AON6998 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
товар відсутній |
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AON6998 | Виробник : Alpha & Omega Semiconductor |
Trans MOSFET N-CH 30V 19A/26A 8-Pin DFN-D EP T/R |
товар відсутній |
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AON6998 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товар відсутній |
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AON6998 | Виробник : Alpha & Omega Semiconductor Inc. |
Description: MOSFET 2N-CH 30V 19A/26A DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 19A, 26A Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFN (5x6) Part Status: Not For New Designs |
товар відсутній |