APTM20UM05SG Microsemi Corporation
Виробник: Microsemi CorporationDescription: MOSFET N-CH 200V 317A MODULE
Packaging: Bulk
Package / Case: J3 Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 317A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V
Power Dissipation (Max): 1136W (Tc)
Vgs(th) (Max) @ Id: 5V @ 10mA
Supplier Device Package: Module
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V
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Технічний опис APTM20UM05SG Microsemi Corporation
Description: MOSFET N-CH 200V 317A MODULE, Packaging: Bulk, Package / Case: J3 Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 317A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 158.5A, 10V, Power Dissipation (Max): 1136W (Tc), Vgs(th) (Max) @ Id: 5V @ 10mA, Supplier Device Package: Module, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 448 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 27400 pF @ 25 V.