ATP218-TL-H onsemi
Виробник: onsemi
Description: MOSFET N-CH 30V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 4.5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
Description: MOSFET N-CH 30V 100A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 4.5V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: ATPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V
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Технічний опис ATP218-TL-H onsemi
Description: MOSFET N-CH 30V 100A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 3.8mOhm @ 50A, 4.5V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: ATPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 10 V.