BUK7516-55A,127 NXP USA Inc.
Виробник: NXP USA Inc.Description: PFET, 65.7A I(D), 55V, 0.016OHM,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65.7A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V
Power Dissipation (Max): 138W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 25 V
на замовлення 4353 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 740+ | 27.58 грн |
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Технічний опис BUK7516-55A,127 NXP USA Inc.
Description: PFET, 65.7A I(D), 55V, 0.016OHM,, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65.7A (Tc), Rds On (Max) @ Id, Vgs: 16mOhm @ 25A, 10V, Power Dissipation (Max): 138W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 2245 pF @ 25 V.