BUK9MJT-55PRF,518 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 55V 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 10A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: 20-SO
Part Status: Obsolete
Description: MOSFET 2N-CH 55V 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 10A, 10V
FET Feature: Logic Level Gate
Supplier Device Package: 20-SO
Part Status: Obsolete
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Технічний опис BUK9MJT-55PRF,518 Nexperia USA Inc.
Description: MOSFET 2N-CH 55V 20SO, Packaging: Tape & Reel (TR), Package / Case: 20-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 55V, Rds On (Max) @ Id, Vgs: 13.8mOhm @ 10A, 10V, FET Feature: Logic Level Gate, Supplier Device Package: 20-SO, Part Status: Obsolete.