DGW50N65CTL1

DGW50N65CTL1 Yangjie Technology


Виробник: Yangjie Technology
Description: Transistors - IGBTs - Single TO-
Packaging: Tape & Reel (TR)
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A
Supplier Device Package: TO-247AB
Td (on/off) @ 25°C: 55ns/319ns
Switching Energy: 1.27mJ (on), 650µJ (off)
Test Condition: 300V, 50A, 10Ohm, 15V
Gate Charge: 450 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 326 W
на замовлення 180000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1800+270.24 грн
9000+ 245.76 грн
18000+ 231.3 грн
36000+ 203.49 грн
72000+ 183.13 грн
180000+ 169.55 грн
Мінімальне замовлення: 1800
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Технічний опис DGW50N65CTL1 Yangjie Technology

Description: Transistors - IGBTs - Single TO-, Packaging: Tape & Reel (TR), Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 50A, Supplier Device Package: TO-247AB, Td (on/off) @ 25°C: 55ns/319ns, Switching Energy: 1.27mJ (on), 650µJ (off), Test Condition: 300V, 50A, 10Ohm, 15V, Gate Charge: 450 nC, Part Status: Active, Current - Collector (Ic) (Max): 85 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 326 W.