EM639165TS-5G Etron Technology, Inc.
Виробник: Etron Technology, Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 4.5 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 128MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 4.5 ns
Memory Organization: 8M x 16
DigiKey Programmable: Not Verified
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Технічний опис EM639165TS-5G Etron Technology, Inc.
Description: IC DRAM 128MBIT PAR 54TSOP II, Packaging: Tape & Reel (TR), Package / Case: 54-TSOP (0.400", 10.16mm Width), Mounting Type: Surface Mount, Memory Size: 128Mbit, Memory Type: Volatile, Operating Temperature: 0°C ~ 70°C (TA), Voltage - Supply: 3V ~ 3.6V, Technology: SDRAM, Clock Frequency: 200 MHz, Memory Format: DRAM, Supplier Device Package: 54-TSOP II, Write Cycle Time - Word, Page: 10ns, Memory Interface: Parallel, Access Time: 4.5 ns, Memory Organization: 8M x 16, DigiKey Programmable: Not Verified.