Інші пропозиції F475R12KS4BOSA1
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F475R12KS4BOSA1 | Виробник : Infineon Technologies |
 Trans IGBT Module N-CH 1200V 100A 500W 24-Pin ECONO2-6 Tray |
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F475R12KS4BOSA1 | Виробник : INFINEON |
Description: INFINEON - F475R12KS4BOSA1 - IGBT-Modul, Viererpack, 100 A, 3.2 V, 500 W, 125 °C, Module IGBT-Technologie: IGBT 2 Fast Sperrschichttemperatur Tj, max.: 125 Kollektor-Emitter-Sättigungsspannung: 3.2 Dauer-Kollektorstrom: 100 IGBT-Anschluss: Einpressmontage Kollektor-Emitter-Sättigungsspannung Vce(on): 3.2 Verlustleistung Pd: 500 Verlustleistung: 500 Bauform - Transistor: Module Kollektor-Emitter-Spannung V(br)ceo: 1.2 Produktpalette: EconoPACK 2 Kollektor-Emitter-Spannung, max.: 1.2 IGBT-Konfiguration: Viererpack Wandlerpolarität: n-Kanal DC-Kollektorstrom: 100 Betriebstemperatur, max.: 125 SVHC: No SVHC (08-Jul-2021) |
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| F475R12KS4BOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x2; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO2-6 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 500W Technology: EconoPACK™ 2 Mechanical mounting: screw кількість в упаковці: 10 шт |
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F475R12KS4BOSA1 | Виробник : Infineon Technologies |
Description: IGBT MOD 1200V 100A 500W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 3.75V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: Module Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 500 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
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| F475R12KS4BOSA1 | Виробник : Infineon Technologies |
IGBT Modules LOW POWER ECONO |
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| F475R12KS4BOSA1 | Виробник : INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge x2; Ic: 75A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge x2; NTC thermistor Max. off-state voltage: 1.2kV Collector current: 75A Case: AG-ECONO2-6 Electrical mounting: Press-in PCB Gate-emitter voltage: ±20V Pulsed collector current: 150A Power dissipation: 500W Technology: EconoPACK™ 2 Mechanical mounting: screw |
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