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FDD4685TF_SB82135

FDD4685TF_SB82135 onsemi


Виробник: onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
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Технічний опис FDD4685TF_SB82135 onsemi

Description: MOSFET P-CH 40V 8.4A/32A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc), Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Obsolete, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V.