FDD8426H

FDD8426H onsemi


FDD8426H.pdf Виробник: onsemi
Description: MOSFET N/P-CH 40V 12A/10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.3W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Obsolete
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Технічний опис FDD8426H onsemi

Description: MOSFET N/P-CH 40V 12A/10A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.3W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 12A, 10A, Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V, Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V, Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252 (DPAK), Part Status: Obsolete.