HERAF1005GH

HERAF1005GH Taiwan Semiconductor Corporation


HERAF1001G%20SERIES_I2105.pdf Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 10A, 400V, HIGH EFFICIENT
Packaging: Tube
Package / Case: TO-220-2 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 1000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
5+68.26 грн
50+ 52.68 грн
100+ 41.75 грн
500+ 33.21 грн
1000+ 27.05 грн
Мінімальне замовлення: 5
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Технічний опис HERAF1005GH Taiwan Semiconductor Corporation

Description: 50NS, 10A, 400V, HIGH EFFICIENT, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: ITO-220AC, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Qualification: AEC-Q101.