HUF76113DK8T Fairchild Semiconductor


FAIRS20733-1.pdf?t.download=true&u=5oefqw Виробник: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: US8
Part Status: Active
на замовлення 77500 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
592+36.74 грн
Мінімальне замовлення: 592
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Технічний опис HUF76113DK8T Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-VFSOP (0.091", 2.30mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 605pF @ 25V, Rds On (Max) @ Id, Vgs: 32mOhm @ 6A, 10V, Gate Charge (Qg) (Max) @ Vgs: 19.2nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: US8, Part Status: Active.