IDB09E60ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GP 600V 19.3A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 19.3A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 9 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
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Технічний опис IDB09E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 19.3A TO263-3-2, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 19.3A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 9 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.