IDP09E120XKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GP 1.2KV 23A TO220-2-1
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 23A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
на замовлення 5305 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 359+ | 55.87 грн |
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Технічний опис IDP09E120XKSA1 Infineon Technologies
Description: DIODE GP 1.2KV 23A TO220-2-1, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 140 ns, Technology: Standard, Current - Average Rectified (Io): 23A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 2.15 V @ 9 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.