IRF630 (TO-220, ST) (ST) - Transistors - Field N-cannal

IRF630 (TO-220, ST)

IRF630 (TO-220, ST)

Product id: 3058
Manufacturer: ST
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9 A
Rds(on), Ohm: 0,4 Ohm
Ciss, pF/Qg, nC: 600/19
Монтаж: THT

in stock: 35 pcs
waiting: 100 pcs
1+ 13.5 UAH
10+ 11.9 UAH
100+ 10.7 UAH

Technical description IRF630 (TO-220, ST)

  • MOSFET, N, TO-220
  • Transistor Type:MOSFET
  • Transistor Polarity:N
  • Typ Voltage Vds:200V
  • Cont Current Id:9A
  • On State Resistance:0.4ohm
  • Voltage Vgs Rds on Measurement:10V
  • Typ Voltage Vgs th:3V
  • Case Style:TO-220
  • Termination Type:Through Hole
  • Alternate Case Style:SOT-78B
  • Current Temperature:25`C
  • Full Power Rating Temperature:25`C
  • Lead Spacing:2.54mm
  • Max Voltage Vds:200V
  • Max Voltage Vgs th:4V
  • Min Voltage Vgs th:2V
  • No. of Pins:3
  • No. of Transistors:1
  • On State resistance @ Vgs = 10V:0.4ohm
  • Pin Configuration:a
  • Pin Format:1G, (2+Tab)D, 3S
  • Power Dissipation:100W
  • Power Dissipation Pd:100W
  • Pulse Current Idm:36A
  • Rds Measurement Voltage:10V
  • Typ Capacitance Ciss:540pF
  • Typ Reverse Recovery Time, trr:170ns
  • Transistor Case Style:TO-220

Possible replacement

IRF630NPBF
IRF630NPBF
Product id: 15961
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9,3 A
Rds(on), Ohm: 0,3 Ohm
Ciss, pF/Qg, nC: 575/35
Монтаж: THT
irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
6 pcs - RADIOMAG-Kyiv
1+ 18 UAH
10+ 15.9 UAH
100+ 14.1 UAH

Price IRF630 (TO-220, ST) From 10.7 UAH to 163.04 UAH

IRF630
Manufacturer: STMicroelectronics
N-канальний ПТ; Udss, В = 200; Id = 9 А; Ptot, Вт = 75; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 700 @ 25; Qg, нКл = 45 @ 10 В; Rds = 400 мОм @ 4,5 A, 10 В; Tексп, °C = -65...+150; Ugs(th) = 4 В @ 250 мкА; TO-220-3
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 40 pc(s)
lead time 2-3 days
28+ 23.06 UAH
30+ 21.51 UAH
100+ 19.98 UAH
IRF630
Manufacturer: ST MICROELECTRONICS
N-Channel, 200V, 9.0A, 75W, Rds=0.40R, TO-220
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 59 pc(s)
lead time 2-3 days
9+ 24.41 UAH
IRF630
Manufacturer: SILI
N-MOSFET 9A 200V 74W 0.4Ω IRF630 (9A), IRF630NPBR (9.3A) IRF630 TIRF630
package quantity: 50 pc(s)
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 450 pc(s)
lead time 28-31 days
50+ 25.5 UAH
IRF630
Manufacturer: SILI
N-MOSFET 9A 200V 74W 0.4Ω IRF630 (9A), IRF630NPBR (9.3A) IRF630 TIRF630
package quantity: 50 pc(s)
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 180 pc(s)
lead time 28-31 days
50+ 25.5 UAH
IRF630
IRF630
Manufacturer: Harris Corporation
Description: MOSFET N-CH 200V 9A TO220AB
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Part Status: Obsolete
HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 23207 pc(s)
lead time 14-21 days
478+ 45.24 UAH
IRF630
Manufacturer: STMicroelectronics
Material: IRF630 THT N channel transistors
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 193 pc(s)
lead time 28-42 days
32+ 47.29 UAH
35+ 39.53 UAH
47+ 29.71 UAH
67+ 28.09 UAH
1000+ 27.4 UAH
IRF630
Manufacturer: STMicroelectronics
Material: IRF630 THT N channel transistors
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 193 pc(s)
lead time 7-14 days
3+ 49.94 UAH
10+ 43.35 UAH
50+ 38.63 UAH
250+ 32.19 UAH
1000+ 28.94 UAH
IRF630
IRF630
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Package / Case: TO-220-3
Packaging: Tube
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
en.CD00000701.pdf
available 35 pc(s)
lead time 14-21 days
1+ 120.23 UAH
10+ 103.17 UAH
IRF630
IRF630
Manufacturer: STMICROELECTRONICS
Description: STMICROELECTRONICS - IRF630 - Leistungs-MOSFET, n-Kanal, 200 V, 9 A, 0.4 ohm, TO-220, Durchsteckmontage
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 200
Dauer-Drainstrom Id: 9
Rds(on)-Messspannung Vgs: 10
Verlustleistung Pd: 100
Bauform - Transistor: TO-220
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.4
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 3
SVHC: No SVHC (17-Dec-2015)
SGST-S-A0007136914-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0
available 487 pc(s)
lead time 21-31 days
5+ 163.04 UAH
10+ 147.55 UAH
100+ 115.09 UAH
IRF630
Manufacturer: STMicroelectronics NV
N-кан. MOSFET 200V, 9A, 0.35Ом, 75Вт, TO-220 (PowerMesh II)
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 58 pc(s)
lead time 4 days
IRF630
IRF630
Manufacturer: Vishay / Siliconix
MOSFET RECOMMENDED ALT 844-IRF630PBF
irf630-1768409.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMicroelectronics
MOSFET N-Ch 200 Volt 10 Amp
irf630-1849162.pdf
available 2767 pc(s)
lead time 14-21 days
IRF630
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
cd0000070.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
sihf630p.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
cd0000070.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
cd0000070.pdf
out of stock, you can ask lead time by adding item to cart

With this product buy

1N4007 (DO-41, Yangjie)
Product id: 1574
1N4001-1N4007.pdf
1N4007 (DO-41, Yangjie)
Manufacturer: YJ/Microsemi
Diodes, Bridge Rectifiers - Rectifier and Pulse Diodes
Корпус: DO-41
Uобр., V (RRM): 1000 V
Iвыпр., A (If): 1 A
Описание: Выпрямительный
Может заменить: 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006
Монтаж: THT
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4664 pcs - RADIOMAG-Lviv
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2054 pcs - RADIOMAG-Dnipro
5+ 1 UAH
10+ 0.7 UAH
100+ 0.6 UAH
1000+ 0.5 UAH
Possible replacement
1N4007 (DO-41, Diotec)
Product id: 127801
Possible replacement
1N4007
Product id: 176822
IRF630NPBF
Product id: 15961
техническая информация irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NPBF
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9,3 A
Rds(on), Ohm: 0,3 Ohm
Ciss, pF/Qg, nC: 575/35
Монтаж: THT
6 pcs - RADIOMAG-Kyiv
available 13248 pcs - show price and lead time
1+ 18 UAH
10+ 15.9 UAH
100+ 14.1 UAH
Possible replacement
IRF630 (TO-220, ST)
Product id: 3058
DB107 (аналог DF10M) диодный мост
Product id: 1531
DB101G-107G.pdf
DB107 (аналог DF10M) диодный мост
Manufacturer: YJ/TSC
Diodes, Bridge Rectifiers - Bridge Rectifiers
Корпус: DB-1 (DIL (8.3x6.4)), DIP
Uобр, V: 1000 V
I пр, A: 1 A
Тип диодного моста: Однофазный
Может заменить:: DB101, DB102, DB103, DB104, DB105, DB106, DB101G, DB102G, DB103G, DB104G, DB105G, DB106G, DB107G, DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
Монтаж: THT
Импульсный ток, А: 50 A
29 pcs - RADIOMAG-Kyiv
71 pcs - RADIOMAG-Kharkiv
2+ 4 UAH
10+ 3.5 UAH
100+ 3.1 UAH
1000+ 2.85 UAH
Possible replacement
DB107G (аналог DF10M) (диодный мост)
Product id: 42562
Possible replacement
DB107GS (аналог DF10S) (диодный мост SMD)
Product id: 42563
Possible replacement
DB107
Product id: 172106
1N5408
Product id: 2135
1N5400-1N5408.pdf
1N5408
Manufacturer: YJ/MIC
Diodes, Bridge Rectifiers - Rectifier and Pulse Diodes
Корпус: DO-201
Uобр., V (RRM): 1000 V
Iвыпр., A (If): 3 A
Описание: Выпрямительный VR=1000 B, IF =3A, IFSM =200A
Может заменить: 1N5400, 1N5401, 1N5402, 1N5403, 1N5404, 1N5405, 1N5406, 1N5407
Монтаж: THT
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available 675375 pcs - show price and lead time
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