IRF630 (TO-220, ST) (ST) - Transistors - Field N-cannal

IRF630 (TO-220, ST)

IRF630 (TO-220, ST)

Product id: 3058
Manufacturer: ST
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9 A
Rds(on), Ohm: 0,4 Ohm
Ciss, pF/Qg, nC: 600/19
Монтаж: THT

On stock/available
38 pcs - stock Kyiv
14 pcs - RADIOMAG-Kyiv
8 pcs - RADIOMAG-Kharkiv
1 pcs - RADIOMAG-Odesa
3 pcs - RADIOMAG-Dnipro

1+ 10 UAH
10+ 9 UAH
100+ 8.2 UAH

Technical description IRF630 (TO-220, ST)

  • MOSFET, N, TO-220
  • Transistor Type:MOSFET
  • Transistor Polarity:N
  • Typ Voltage Vds:200V
  • Cont Current Id:9A
  • On State Resistance:0.4ohm
  • Voltage Vgs Rds on Measurement:10V
  • Typ Voltage Vgs th:3V
  • Case Style:TO-220
  • Termination Type:Through Hole
  • Alternate Case Style:SOT-78B
  • Current Temperature:25`C
  • Full Power Rating Temperature:25`C
  • Lead Spacing:2.54mm
  • Max Voltage Vds:200V
  • Max Voltage Vgs th:4V
  • Min Voltage Vgs th:2V
  • No. of Pins:3
  • No. of Transistors:1
  • On State resistance @ Vgs = 10V:0.4ohm
  • Pin Configuration:a
  • Pin Format:1G, (2+Tab)D, 3S
  • Power Dissipation:100W
  • Power Dissipation Pd:100W
  • Pulse Current Idm:36A
  • Rds Measurement Voltage:10V
  • Typ Capacitance Ciss:540pF
  • Typ Reverse Recovery Time, trr:170ns
  • Transistor Case Style:TO-220

Possible replacement

IRF630NPBF
IRF630NPBF
Product id: 15961
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9,3 A
Rds(on), Ohm: 0,3 Ohm
Ciss, pF/Qg, nC: 575/35
Монтаж: THT
irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
8 pcs - stock Kyiv
40 pcs - RADIOMAG-Kyiv
19 pcs - RADIOMAG-Lviv
6 pcs - RADIOMAG-Kharkiv
19 pcs - RADIOMAG-Odesa
30 pcs - RADIOMAG-Dnipro
1+ 11.5 UAH
10+ 10.3 UAH
100+ 9.5 UAH

Price IRF630 (TO-220, ST) From 8.2 UAH to 32.34 UAH

IRF630
Manufacturer: STMicroelectronics
N-канальний ПТ; Udss, В = 200; Id = 9 А; Ptot, Вт = 75; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 700 @ 25; Qg, нКл = 45 @ 10 В; Rds = 400 мОм @ 4,5 A, 10 В; Tексп, °C = -65...+150; Ugs(th) = 4 В @ 250 мкА; TO-220-3
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 40 pc(s)
lead time 2-3 days
38+ 15.38 UAH
41+ 14.36 UAH
100+ 13.33 UAH
IRF630
Manufacturer: INCHANGE
N-MOSFET 9A 200V 75W 0.35? IRF630 (9A), IRF630NPBR (9.3A) Trans. IRF630 TO220 TIRF630
package quantity: 50 pc(s)
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 53 pc(s)
lead time 14-28 days
50+ 15.8 UAH
IRF630
Manufacturer: ST MICROELECTRONICS
N-Channel, 200V, 9.0A, 75W, Rds=0.40R, TO-220
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 64 pc(s)
lead time 2-3 days
13+ 16.85 UAH
IRF630
Manufacturer: ST

en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 4906 pc(s)
lead time 16-23 days
20+ 19.87 UAH
30+ 18.56 UAH
150+ 15.99 UAH
700+ 15.16 UAH
IRF630
IRF630
Manufacturer: Harris Corporation
Description: MOSFET N-CH 200V 9A TO220AB
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: Rochester Electronics, LLC
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 23957 pc(s)
lead time 7-22 days
589+ 21.23 UAH
IRF630
Manufacturer: STMicroelectronics
Material: IRF630 THT N channel transistors
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 463 pc(s)
lead time 7-14 days
3+ 27.81 UAH
10+ 24.12 UAH
31+ 17.59 UAH
84+ 16.63 UAH
1000+ 16.12 UAH
IRF630
IRF630
Manufacturer:
/to-220/ Транзистор
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 36 pc(s)
lead time 3-5 days
10+ 32.34 UAH
IRF630
Manufacturer: STMicroelectronics NV
N-кан. MOSFET 200V, 9A, 0.35Ом, 75Вт, TO-220 (PowerMesh II)
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 163 pc(s)
lead time 4 days
IRF630
Manufacturer:
IRF630 N-CHANNEL 200V - 0.35W - 9A TO-220FP MESH OVERLAY MOSFET
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
available 14 pc(s)
lead time 4-5 days
IRF630
IRF630
Manufacturer: Vishay
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB
sihf630p.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 200V 9A TO220AB
Base Part Number: IRF6
Package / Case: TO-220-3
Supplier Device Package: TO-220
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: STMicroelectronics
en.CD00000701.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
cd0000070.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
cd0000070.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: Vishay / Siliconix
MOSFET RECOMMENDED ALT 844-IRF630PBF
sihf630p-1768409.pdf
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMicroelectronics
MOSFET N-Ch 200 Volt 10 Amp
cd00000701-1795498.pdf
available 4900 pc(s)
lead time 8-21 days
IRF630
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 9A 3-Pin(3+Tab) TO-220AB Tube
en.CD00000701.pdf HRISD017-4-316.pdf?t.download=true&u=5oefqw
out of stock, you can ask lead time by adding item to cart
IRF630
IRF630
Manufacturer: STMICROELECTRONICS
Description: STMICROELECTRONICS - IRF630 - Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole
Transistor Polarity: N Channel
On Resistance Rds(on): 0.4
Product Range: -
Power Dissipation Pd: 100
Continuous Drain Current Id: 9
Operating Temperature Max: 150
Transistor Mounting: Through Hole
MSL: -
Automotive Qualification Standard: -
Threshold Voltage Vgs: 3
Drain Source Voltage Vds: 200
Transistor Case Style: TO-220
Rds(on) Test Voltage Vgs: 10
No. of Pins: 3
SVHC: No SVHC (17-Dec-2015)
1689784.pdf
out of stock, you can ask lead time by adding item to cart

With this product buy

DB107 (аналог DF10M) диодный мост
Product id: 1531
DB101G-107G.pdf
DB107 (аналог DF10M) диодный мост
Manufacturer: YJ/TSC
Diodes, Bridge Rectifiers - Bridge Rectifiers
Корпус: DB-1 (DIL (8.3x6.4)), DIP
Uобр, V: 1000 V
I пр, A: 1 A
Тип диодного моста: Однофазный
Может заменить:: DB101, DB102, DB103, DB104, DB105, DB106, DB101G, DB102G, DB103G, DB104G, DB105G, DB106G, DB107G, DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M
Монтаж: THT
Импульсный ток, А: 50 A
1839 pcs - stock Kyiv
93 pcs - RADIOMAG-Kyiv
94 pcs - RADIOMAG-Lviv
88 pcs - RADIOMAG-Kharkiv
82 pcs - RADIOMAG-Odesa
76 pcs - RADIOMAG-Dnipro
3100 pcs - waiting
2+ 3.5 UAH
10+ 3.15 UAH
100+ 2.8 UAH
1000+ 2.25 UAH
10000+ 1.75 UAH
Possible replacement
DB107G (аналог DF10M) (диодный мост)
Product id: 42562
Possible replacement
DB107GS (аналог DF10S) (диодный мост SMD)
Product id: 42563
Possible replacement
DB107
Product id: 172106
IRF630NPBF
Product id: 15961
техническая информация irf630npbf.pdf?fileId=5546d462533600a4015355e7ae3819e6
IRF630NPBF
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 9,3 A
Rds(on), Ohm: 0,3 Ohm
Ciss, pF/Qg, nC: 575/35
Монтаж: THT
8 pcs - stock Kyiv
40 pcs - RADIOMAG-Kyiv
19 pcs - RADIOMAG-Lviv
6 pcs - RADIOMAG-Kharkiv
19 pcs - RADIOMAG-Odesa
30 pcs - RADIOMAG-Dnipro
available 31222 pcs - show price and lead time
1+ 11.5 UAH
10+ 10.3 UAH
100+ 9.5 UAH
Possible replacement
IRF630 (TO-220, ST)
Product id: 3058
BC337-16 (транзистор биполярный NPN)
Product id: 41468
BC337-16 (транзистор биполярный NPN)
Manufacturer: Fairchild
Transistors - Bipolar NPN
Корпус: TO-92
fT: 100 MHz
Uceo,V: 45 V
Ucbo,V: 50 V
Ic,A: 0,8 A
Монтаж: THT
3 pcs - RADIOMAG-Kyiv
12 pcs - RADIOMAG-Kharkiv
5 pcs - RADIOMAG-Odesa
1000 pcs - waiting
3+ 2 UAH
10+ 1.5 UAH
100+ 1.12 UAH
100 Ohm 5% 1W выв. (CR100SJTB-100R-Hitano)
Product id: 2957
CR-S_080911.pdf
100 Ohm 5% 1W выв. (CR100SJTB-100R-Hitano)
Manufacturer: Hitano
Resistors (Through Hole) - 1W
Номинал: 100 Ohm
Точность и ТКС: ±5%
P ном., W: 1 W
U, раб.: 500 V
Габариты: 9x3 mm; Dвыв=0,64 mm
Тип: угольные миниатюрные
Температура: -55...+125°C
9 pcs - stock Kyiv
245 pcs - RADIOMAG-Kyiv
470 pcs - RADIOMAG-Lviv
180 pcs - RADIOMAG-Kharkiv
350 pcs - RADIOMAG-Odesa
65 pcs - RADIOMAG-Dnipro
10+ 0.75 UAH
100+ 0.45 UAH
1000+ 0.36 UAH