IRF640 (ST) - Transistors - Field N-cannal

IRF640

IRF640

Product id: 7926
Manufacturer: ST
Корпус: TO-220
Uds,V: 200 V
Idd,A: 18 A
Rds(on), Ohm: 0,18 Ohm
Ciss, pF/Qg, nC: 1300/70
Монтаж: THT

IRF640.pdf
On stock/available

Technical description IRF640

  • MOSFET, N, TO-220
  • Transistor Type:MOSFET
  • Transistor Polarity:N
  • Cont Current Id:18A
  • On State Resistance:0.18ohm
  • Case Style:TO-220 (SOT-78B)
  • Alternate Case Style:SOT-78B
  • Avalanche Single Pulse Energy Eas:280mJ
  • Current Temperature:25`C
  • Full Power Rating Temperature:25`C
  • Lead Spacing:2.54mm
  • Max Power Dissipation Ptot:125W
  • Max Voltage Vds:200V
  • Max Voltage Vgs th:4V
  • Min Voltage Vgs th:2V
  • No. of Pins:3
  • No. of Transistors:1
  • On State resistance @ Vgs = 10V:0.18ohm
  • Pin Configuration:a
  • Pin Format:1G, (2+Tab)D, 3S
  • Power Dissipation:125W
  • Power Dissipation Pd:125W
  • Pulse Current Idm:72A
  • Typ Capacitance Ciss:1200pF
  • Typ Reverse Recovery Time, trr:240ns
  • Transistor Case Style:TO-220

Possible replacement

IRF640N
IRF640N
Product id: 30510
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 18 A
Rds(on), Ohm: 0,15 Ohm
Ciss, pF/Qg, nC: 1160/67
Монтаж: THT

IRF640NPBF
IRF640NPBF
Product id: 42934
Manufacturer: IR
Transistors - Field N-cannal
Корпус: TO-220
Uds,V: 200 V
Idd,A: 18 A
Rds(on), Ohm: 0,15 Ohm
Ciss, pF/Qg, nC: 1160/67
Монтаж: THT
irf640npbf.pdf?fileId=5546d462533600a4015355e7be9019ee
300 pcs - stock Kyiv
44 pcs - RADIOMAG-Kyiv
20 pcs - RADIOMAG-Lviv
22 pcs - RADIOMAG-Kharkiv
1 pcs - RADIOMAG-Odesa
26 pcs - RADIOMAG-Dnipro
1+ 18 UAH
10+ 16.2 UAH
100+ 14.5 UAH
1000+ 12.9 UAH

Price IRF640 From 22.67 UAH to 40.42 UAH

IRF640
Manufacturer: SILI
N-MOSFET 18A 200V 125W 0.15? Trans. IRF640 TO220 TIRF640
package quantity: 10 pc(s)
en.CD00000702.pdf
available 160 pc(s)
lead time 14-28 days
16+ 22.67 UAH
IRF640
IRF640
Manufacturer:
Транзистор
en.CD00000702.pdf
available 26 pc(s)
lead time 3-5 days
8+ 40.42 UAH
IRF640
Manufacturer:
Транзист. 18A, 200V, 0.180 Ohm, N-Channel Power MOSFETs
en.CD00000702.pdf
out of stock, you can ask lead time by adding item to cart
IRF640
IRF640
Manufacturer: Vishay
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB
sihf640.pdf
out of stock, you can ask lead time by adding item to cart
IRF640
IRF640
Manufacturer: STMicroelectronics
Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB Tube
3007.pdf
out of stock, you can ask lead time by adding item to cart
IRF640
IRF640
Manufacturer: STMicroelectronics
Description: MOSFET N-CH 200V 18A TO220AB
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Manufacturer: STMicroelectronics
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 180mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1560pF @ 25V
Power Dissipation (Max): 125W (Tc)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3
Base Part Number: IRF6
en.CD00000702.pdf
out of stock, you can ask lead time by adding item to cart
IRF640
IRF640
Manufacturer: STMicroelectronics
MOSFET N-Ch 200 Volt 18 Amp
stmicroelectronics_cd00000702-1204609.pdf
out of stock, you can ask lead time by adding item to cart
IRF640
IRF640
Manufacturer: Vishay / Siliconix
MOSFET RECOMMENDED ALT 844-IRF640PBF
sihf640-1768608.pdf
out of stock, you can ask lead time by adding item to cart