Технічний опис IRF7413(PBF) IR
Description: MOSFET N-CH 30V 13A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.
Інші пропозиції IRF7413(PBF)
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IRF7413PBF | Виробник : Infineon Technologies |
 Description: MOSFET N-CH 30V 13A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 7.3A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
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IRF7413PBF | Виробник : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 11mOhms 44nC |
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IRF7413PBF | Виробник : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 44nC Kind of channel: enhanced |
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