IRF7769L1TRPBF - Transistors - Field N-cannal

IRF7769L1TRPBF

IRF7769L1TRPBF

Product id: 107945
Manufacturer:
Transistors - Field N-cannal

irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
On stock/available

Technical description IRF7769L1TRPBF

Price IRF7769L1TRPBF From 74.12 UAH to 457.62 UAH

IRF7769L1TRPBF
IRF7769L1TRPBF
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 20A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric L8
Supplier Device Package: DIRECTFET L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
available 7775 pc(s)
lead time 7-22 days
1+ 160.74 UAH
10+ 144.33 UAH
25+ 123.32 UAH
100+ 98.66 UAH
500+ 87.69 UAH
1000+ 75.09 UAH
IRF7769L1TRPBF
Manufacturer: Infineon Technologies
Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
available 68 pc(s)
lead time 6-21 days
3+ 163.55 UAH
10+ 126.8 UAH
25+ 108.24 UAH
IRF7769L1TRPBF
IRF7769L1TRPBF
Manufacturer: Infineon / IR
MOSFET 100V N-CH 142A 3.5 mOhm 200nC
Infineon-IRF7769L1-DS-v02_00-EN-1732060.pdf
available 10526 pc(s)
lead time 8-21 days
1+ 169.75 UAH
10+ 142.29 UAH
100+ 93.56 UAH
500+ 87.83 UAH
IRF7769L1TRPBF
IRF7769L1TRPBF
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 20A DIRECTFET
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Surcharge for the reel of $7)
Package / Case: DirectFET™ Isometric L8
Supplier Device Package: DIRECTFET L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
available 8634 pc(s)
lead time 7-22 days
1+ 457.62 UAH
10+ 174.01 UAH
25+ 134.05 UAH
100+ 101.34 UAH
250+ 94.25 UAH
500+ 88.23 UAH
1000+ 74.12 UAH
IRF7769L1TRPBF
Manufacturer: Infineon Technologies
Trans MOSFET N-CH Si 100V 20A 15-Pin Direct-FET L8 T/R
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
out of stock, you can ask lead time by adding item to cart
IRF7769L1TRPBF
Manufacturer: INFINEON TECHNOLOGIES
Material: IRF7769L1TRPBF SMD N channel transistors
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
out of stock, you can ask lead time by adding item to cart
IRF7769L1TRPBF
IRF7769L1TRPBF
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 100V 20A DIRECTFET
Input Capacitance (Ciss) (Max) @ Vds: 11560pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 74A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 124A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric L8
Supplier Device Package: DIRECTFET L8
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
irf7769l1pbf.pdf?fileId=5546d462533600a4015356079bd91cb4
out of stock, you can ask lead time by adding item to cart