IRFL024ZPbF (транзистор) (IR) - Transistors - Field N-cannal

IRFL024ZPbF (транзистор)

IRFL024ZPbF (транзистор)

Product id: 76176
Manufacturer: IR
Корпус: SOT-223
Uds,V: 55 V
Idd,A: 5,1 A
Rds(on), Ohm: 57,5 mOhm
Ciss, pF/Qg, nC: 340/9,1
Монтаж: SMD

irfl024zpbf-datasheet.pdf
On stock/available
5 pcs - stock Kyiv
10 pcs - RADIOMAG-Kyiv
10 pcs - RADIOMAG-Lviv

1+ 11.5 UAH

Technical description IRFL024ZPbF (транзистор)

  • MOSFET, N, 55V, 5.1A, SOT-223
  • Transistor Type:MOSFET
  • Transistor Polarity:N
  • Typ Voltage Vds:55V
  • Cont Current Id:5.1A
  • On State Resistance:0.058ohm
  • Voltage Vgs Rds on Measurement:10V
  • Typ Voltage Vgs th:4V
  • Case Style:SOT-223
  • Termination Type:SMD
  • Current Temperature:25`C
  • Full Power Rating Temperature:25`C
  • Junction to Case Thermal Resistance A:45`C/W
  • Max Voltage Vds:55V
  • Max Voltage Vgs th:4V
  • On State resistance @ Vgs = 10V:57.5ohm
  • Power Dissipation:2.8W
  • Power Dissipation Pd:2.8W
  • Pulse Current Idm:41A
  • Transistor Case Style:SOT-223

Price IRFL024ZPbF (транзистор) From 11.5 UAH to 33.92 UAH

IRFL024ZPBF
IRFL024ZPBF
Manufacturer: Infineon / IR
MOSFET 55V 1 N-CH HEXFET 5.1mOhms 9.1nC
irfl024zpbf-1227612.pdf
available 875 pc(s)
lead time 8-21 days
2+ 33.92 UAH
10+ 28.02 UAH
100+ 15.72 UAH
1000+ 12.57 UAH
IRFL024ZPBF
Manufacturer:
IRFL024Z SOT223/55V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A SOT-223 PACKAGE
irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2
available 13 pc(s)
lead time 4-5 days
IRFL024ZPBF
IRFL024ZPBF
Manufacturer: Infineon Technologies
Description: MOSFET N-CH 55V 5.1A SOT223
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 57.5mOhm @ 3.1A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
Drain to Source Voltage (Vdss): 55V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Discontinued at Digi-Key
Packaging: Tube
irfl024zpbf.pdf?fileId=5546d462533600a401535627dcd91fb2
out of stock, you can ask lead time by adding item to cart
IRFL024ZPBF
IRFL024ZPBF
Manufacturer: INFINEON
Description: INFINEON - IRFL024ZPBF - Power MOSFET, Automotive, N Channel, 55 V, 5.1 A, 0.0462 ohm, SOT-223, Surface Mount
Transistor Polarity: N Channel
On Resistance Rds(on): 0.0462
Product Range: -
Power Dissipation Pd: 2.8
Continuous Drain Current Id: 5.1
Operating Temperature Max: 150
Transistor Mounting: Surface Mount
MSL: MSL 1 - Unlimited
Automotive Qualification Standard: -
Threshold Voltage Vgs: 4
Drain Source Voltage Vds: 55
Transistor Case Style: SOT-223
Rds(on) Test Voltage Vgs: 10
No. of Pins: 3
717253.pdf
out of stock, you can ask lead time by adding item to cart

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