Інші пропозиції IRGIB15B60KD1P
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRGIB15B60KD1P | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 19A 52000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube |
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IRGIB15B60KD1P | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 52W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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IRGIB15B60KD1P | Виробник : Infineon Technologies |
Description: IGBT 600V 19A 52W TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 67 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A Supplier Device Package: TO-220AB Full-Pak IGBT Type: NPT Td (on/off) @ 25°C: 30ns/173ns Switching Energy: 127µJ (on), 334µJ (off) Test Condition: 400V, 15A, 22Ohm, 15V Gate Charge: 56 nC Current - Collector (Ic) (Max): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 38 A Power - Max: 52 W |
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IRGIB15B60KD1P | Виробник : Infineon Technologies |
IGBT Transistors 600V Low-Vceon |
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IRGIB15B60KD1P | Виробник : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 19A; 52W; TO220AB Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 19A Power dissipation: 52W Case: TO220AB Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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