IRL6372PBF - Transistors - Field N-cannal

IRL6372PBF

IRL6372PBF

Product id: 106344
Manufacturer:
Transistors - Field N-cannal

irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
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Technical description IRL6372PBF

Price IRL6372PBF From 0 UAH to 0 UAH

IRL6372PBF
IRL6372PBF
Manufacturer: Infineon Technologies
Description: MOSFET 2N-CH 30V 8.1A 8SO
Packaging: Tube
Part Status: Discontinued at Digi-Key
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8.1A
Rds On (Max) @ Id, Vgs: 17.9mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
irl6372pbf.pdf?fileId=5546d462533600a401535660046e2579
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IRL6372PBF
IRL6372PBF
Manufacturer: INFINEON
Description: INFINEON - IRL6372PBF - Dual MOSFET, N Channel, 30 V, 8.1 A, 0.014 ohm, SOIC, Surface Mount
Transistor Polarity: N Channel
On Resistance Rds(on): 0.014
Product Range: -
Power Dissipation Pd: 2
Continuous Drain Current Id: 8.1
Operating Temperature Max: 150
Transistor Mounting: Surface Mount
MSL: MSL 1 - Unlimited
Automotive Qualification Standard: -
Threshold Voltage Vgs: 1.1
Drain Source Voltage Vds: 30
Transistor Case Style: SOIC
Rds(on) Test Voltage Vgs: 4.5
No. of Pins: 8
1302155.pdf
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