JANTX1N6779 Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 600V 15A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-257
Operating Temperature - Junction: 150°C (Max)
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
Qualification: MIL-PRF-19500/647
Description: DIODE GEN PURP 600V 15A TO257
Packaging: Bulk
Package / Case: TO-257-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-257
Operating Temperature - Junction: 150°C (Max)
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 480 V
Qualification: MIL-PRF-19500/647
на замовлення 29 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 32342.13 грн |
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Технічний опис JANTX1N6779 Microchip Technology
Description: DIODE GEN PURP 600V 15A TO257, Packaging: Bulk, Package / Case: TO-257-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 60 ns, Technology: Standard, Capacitance @ Vr, F: 300pF @ 5V, 1MHz, Current - Average Rectified (Io): 15A, Supplier Device Package: TO-257, Operating Temperature - Junction: 150°C (Max), Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 15 A, Current - Reverse Leakage @ Vr: 10 µA @ 480 V, Qualification: MIL-PRF-19500/647.