NCV8440STT3G onsemi
Виробник: onsemiDescription: MOSFET N-CH 59V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.69W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 100µA
Supplier Device Package: SOT-223 (TO-261)
Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 59 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис NCV8440STT3G onsemi
Description: MOSFET N-CH 59V 2.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 110mOhm @ 2.6A, 10V, Power Dissipation (Max): 1.69W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 100µA, Supplier Device Package: SOT-223 (TO-261), Drive Voltage (Max Rds On, Min Rds On): 3.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 59 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 35 V.