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NDC7002N_SB9G007

NDC7002N_SB9G007 onsemi


ndc7002n-d.pdf Виробник: onsemi
Description: MOSFET 2N-CH 50V 0.51A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 510mA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SuperSOT™-6
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Технічний опис NDC7002N_SB9G007 onsemi

Description: MOSFET 2N-CH 50V 0.51A SSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 510mA, Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 510mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 1nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SuperSOT™-6.