NSR10404NXT5G onsemi
Виробник: onsemi
Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 2V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Schottky
Capacitance @ Vr, F: 50pF @ 2V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
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Технічний опис NSR10404NXT5G onsemi
Description: DIODE SCHOTTKY 40V 1A 2DSN, Packaging: Bulk, Package / Case: 0402 (1006 Metric), Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 20 ns, Technology: Schottky, Capacitance @ Vr, F: 50pF @ 2V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: 2-DSN (1x0.6), (0402), Operating Temperature - Junction: 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A, Current - Reverse Leakage @ Vr: 40 µA @ 40 V.