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NTLJS3180PZTAG

NTLJS3180PZTAG onsemi


data%20sheet%20ntljs3180pz.pdf Виробник: onsemi
Description: MOSFET P-CH 20V 3.5A 6WDFN
Packaging: Bulk
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V
на замовлення 9000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1480+13.52 грн
Мінімальне замовлення: 1480
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Технічний опис NTLJS3180PZTAG onsemi

Description: MOSFET P-CH 20V 3.5A 6WDFN, Packaging: Bulk, Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-WDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 16 V.