NVXR17S90M2SPB onsemi

Description: SIC 900V 8D MOSFET V-SSDC SPB, Packaging: Bulk, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 6 N-Channel (3-Phase Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1kW (Tj), Drain to Source Voltage (Vdss): 900V, Current - Continuous Drain (Id) @ 25°C: 620A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 400V, Rds On (Max) @ Id, Vgs: 2.1mOhm @ 620A, 18V, Gate Charge (Qg) (Max) @ Vgs: 2400nC @ 18V, Vgs(th) (Max) @ Id: 4.3V @ 200mA, Supplier Device Package: SSDC39, Grade: Automotive, Qualification: AEC-Q101.