RJK60S4DPP-E0#T2

RJK60S4DPP-E0#T2 Renesas Electronics Corporation


RNCCS18801-1.pdf?t.download=true&u=5oefqw Виробник: Renesas Electronics Corporation
Description: MOSFET N-CH 600V 16A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V
Power Dissipation (Max): 29.9W (Tc)
Supplier Device Package: TO-220FP
Part Status: Obsolete
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V
на замовлення 114548 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
65+306.54 грн
Мінімальне замовлення: 65
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Технічний опис RJK60S4DPP-E0#T2 Renesas Electronics Corporation

Description: MOSFET N-CH 600V 16A TO220FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), Rds On (Max) @ Id, Vgs: 290mOhm @ 8A, 10V, Power Dissipation (Max): 29.9W (Tc), Supplier Device Package: TO-220FP, Part Status: Obsolete, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 988 pF @ 25 V.