SGH30N60RUFTU Fairchild Semiconductor
Виробник: Fairchild SemiconductorDescription: IGBT, 48A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Supplier Device Package: TO-3PN
Td (on/off) @ 25°C: 30ns/54ns
Switching Energy: 919µJ (on), 814µJ (off)
Test Condition: 300V, 30A, 7Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 235 W
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Технічний опис SGH30N60RUFTU Fairchild Semiconductor
Description: IGBT, 48A, 600V, N-CHANNEL, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A, Supplier Device Package: TO-3PN, Td (on/off) @ 25°C: 30ns/54ns, Switching Energy: 919µJ (on), 814µJ (off), Test Condition: 300V, 30A, 7Ohm, 15V, Gate Charge: 85 nC, Current - Collector (Ic) (Max): 48 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 90 A, Power - Max: 235 W.